Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy

Theresa M. Christian, Daniel A. Beaton, John D. Perkins, Brian Fluegel, Kirstin Alberi, Angelo Mascarenhas

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2 Scopus Citations


Two distinctive regimes of behavior are observed from GaP1- x - y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. This change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

Original languageAmerican English
Article number111201
Number of pages6
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-70115


  • bismide
  • impurities
  • semiconductors


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