Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy

Theresa M. Christian; Daniel A. Beaton; John D. Perkins; Brian Fluegel; Kirstin Alberi; Angelo Mascarenhas

doi:10.7567/JJAP.56.111201

Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy

Theresa M. Christian, Daniel A. Beaton, John D. Perkins, Brian Fluegel, Kirstin Alberi, Angelo Mascarenhas

Materials Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

Two distinctive regimes of behavior are observed from GaP_1- _x _- _y Bi _x N _y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. This change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

Original language	American English
Article number	111201
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	56
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.56.111201 https://doi.org/10.7567/JJAP.56.111201
State	Published - 2017

Bibliographical note

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-70115

Keywords

bismide
impurities
semiconductors

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title = "Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy",

abstract = "Two distinctive regimes of behavior are observed from GaP1- x - y Bi x N y alloys with x < 2.4\%, y < 3.4\% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55\% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. This change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.",

keywords = "bismide, impurities, semiconductors",

author = "Christian, \{Theresa M.\} and Beaton, \{Daniel A.\} and Perkins, \{John D.\} and Brian Fluegel and Kirstin Alberi and Angelo Mascarenhas",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",

year = "2017",

doi = "10.7567/JJAP.56.111201",

language = "American English",

volume = "56",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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T1 - Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy

AU - Christian, Theresa M.

AU - Beaton, Daniel A.

AU - Perkins, John D.

AU - Fluegel, Brian

AU - Alberi, Kirstin

AU - Mascarenhas, Angelo

PY - 2017

Y1 - 2017

N2 - Two distinctive regimes of behavior are observed from GaP1- x - y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. This change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

AB - Two distinctive regimes of behavior are observed from GaP1- x - y Bi x N y alloys with x < 2.4%, y < 3.4% grown by molecular beam epitaxy. These regimes are correlated with abundant bismuth interstitial impurities that are encouraged or suppressed according to the sample growth temperature, with up to 55% of incorporated bismuth located interstitially. When bismuth interstitials are present, radiative recombination arises at near-band-edge localized states rather than from impurity bands and deep state luminescence. This change demonstrates a novel strategy for controlling luminescence in isoelectronic semiconductor alloys and is attributed to a disruption of carrier transfer processes.

KW - bismide

KW - impurities

KW - semiconductors

UR - https://www.scopus.com/pages/publications/85039075436

U2 - 10.7567/JJAP.56.111201

DO - 10.7567/JJAP.56.111201

M3 - Article

AN - SCOPUS:85039075436

SN - 0021-4922

VL - 56

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11

M1 - 111201

ER -

Bismuth Interstitial Impurities and the Optical Properties of GaP1-x-yBixNy

Abstract

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Keywords

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