Abstract
The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge state, they are more stable near the anion. The diffusion energy barrier changes when the defect charge state changes. Therefore, if electrons/holesare taken from the defect level by light, changing its charge state, the interstitial atom will be able to diffuse almost spontaneously due to a reduced diffusion barrier.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005 |
Conference
| Conference | 2005 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 7/11/05 → 10/11/05 |
Bibliographical note
Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)NREL Publication Number
- NREL/CP-590-38993
Keywords
- cation interstitial
- NREL
- photovoltaics (PV)
- PV
- semiconductor
- solar