Blue-Green Emission from Epitaxial Yet Cation-Disordered ZnGeN2-xOx

Celeste L. Melamed, M. Brooks Tellekamp, John S. Mangum, John D. Perkins, Patricia Dippo, Eric S. Toberer, Adele C. Tamboli

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations


ZnGeN2 offers a low-cost alternative to InGaN with the potential for band-gap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN2-xOx thin film library grown by combinatorial co-sputtering on c-Al2O3. Samples exhibit x-ray diffraction patterns and x-ray pole figures characteristic of a wurtzite (cation-disordered) structure with the expected sixfold in-plane symmetry. Transmission electron microscopy reveals a semicoherent interface with periodic dislocations that relieve strain from the large lattice mismatch and also confirms the in-plane and out-of-plane crystallographic orientation. Roomerature photoluminescence exhibits peaks between 2.4 and 2.8 eV which are consistent with a sharp absorption onset observed by UV-vis spectroscopy. These results demonstrate low-cost synthesis of optically active yet cation disordered ZnGeN2-xOx, indicating a path toward application as a blue-green emitter.

Original languageAmerican English
Article number051602
Number of pages7
JournalPhysical Review Materials
Issue number5
StatePublished - 17 May 2019

Bibliographical note

Publisher Copyright:
© 2019 American Physical Society.

NREL Publication Number

  • NREL/JA-5K00-72835


  • disordered systems
  • epitaxy
  • optoelectronics
  • photoluminescence
  • semiconductor compounds
  • sputtering
  • wide band gap systems


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