Abstract
Polycrystalline semiconductor films, such as methylammonium lead iodide, cadmium telluride, copper-indium-gallium selenide, etc., are being intensively studied because of their great potential for highly efficient and cost-effective solar cells. Among them, polycrystalline antimony chalcogenide films are also promising for photovoltaic applications because they are nontoxic, stable, and flexible and have a suitable band gap. Considerable effort has already been devoted to improving the power conversion efficiency of antimony chalcogenide solar cells, but their efficiency still lingers below 10% due in part to scarce fundamental optoelectronic studies that help guide their development. Here, we use a combination of time-resolved terahertz and transient absorption spectroscopies to interrogate the optoelectronic behavior of antimony selenide thin films. By combining these two techniques we are able to monitor both free and trapped carrier dynamics and then evaluate their respective diffusion lengths. Our results indicate that trapped carriers remain mobile and can reach charge-collecting interfaces prior to recombination, and therefore, both free and trapped carriers can contribute to the photocurrent of antimony selenide solar cells.
Original language | American English |
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Pages (from-to) | 4881-4887 |
Number of pages | 7 |
Journal | Journal of Physical Chemistry Letters |
Volume | 10 |
Issue number | 17 |
DOIs | |
State | Published - 5 Sep 2019 |
Bibliographical note
Publisher Copyright:Copyright © 2019 American Chemical Society.
NREL Publication Number
- NREL/JA-5900-72852
Keywords
- carrier dynamics
- Sb2Se3
- solar-photochemistry
- thin film