Bound Exciton Luminescence in Shock Compressed GaP:S and GaP:N

P. Grivickas, M. D. McCluskey, Y. M. Gupta, Y. Zhang, J. F. Geisz

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2 Scopus Citations


Photoluminescence (PL) spectra of bound excitons were measured in uniaxially strained GaP by performing shock-wave experiments at liquid nitrogen temperatures. GaP samples doped with sulfur or nitrogen were compressed up to 3 GPa when subjected to uniaxial strains along the [100] crystallographic orientation. PL lines from shallow sulfur donors redshifted upon compression, tracking the reduction in the indirect band gap. PL lines related to the isoelectronic NN1 pairs, in contrast, exhibited splitting and nonlinear blueshift. An empirical approach was used to model the NN1 behavior. It was shown that the splitting pattern is consistent with the previously proposed symmetry of NN1 defects and nonlinearities resulting from the reduction in the exciton binding energy. At high stresses, the NN1 lines disappeared due to the ionization of bound excitons.

Original languageAmerican English
Article numberArticle No. 023710
Number of pages7
JournalJournal of Applied Physics
Issue number2
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-46627


  • excitons
  • hydrostatics
  • III-V semiconductors
  • ionization
  • photoluminescence


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