Bulk Defect Generation During B-Diffusion and Oxidation of CZ Wafers: Mechanism for Degrading Solar Cell Performance

Bhushan Sopori, Hao Chih Yuan, Srinivas Devayajanam, Prakash Basnyat, Vincenzo Lasalvia, Andrew Norman, Matt Page, Bill Nemeth, Paul Stradins

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

We describe results of our experimental study to investigate the effect of B diffusion and drive-in/oxidation on minority carrier lifetime of the wafer. We have observed that B diffusion generates stacking faults that can be attributed to injection of Si interstitials into the wafer by formation of a boron rich layer at the wafer surface. These Si interstitials are also believed to enhance interactions between the native point defects and impurities (such as O, Fe) in the wafers during subsequent processing leading to the development of swirl patterns. Spatial variation of the lifetime degradation follows the point defect interactions and impurity segregation/precipitation. Lifetime can be partially recovered by Phosphorous (P) gettering. The overall effect on the cell performance due to Si interstitial generation, impurity/point defect interactions, and P-gettering is briefly discussed.

Original languageAmerican English
Pages719-723
Number of pages5
DOIs
StatePublished - 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period8/06/1413/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5J00-61226

Keywords

  • defects
  • diffusion
  • etching
  • minority carrier lifetime degradation
  • oxidation
  • Silicon
  • stacking faults

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