Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

A. J. Ptak; D. J. Friedman; Sarah Kurtz; R. C. Reedy; M. Young; D. B. Jackrel; H. B. Yuen; S. R. Bank; M. A. Wistey; J. S. Harris

doi:10.1116/1.2190664

Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

A. J. Ptak, D. J. Friedman, Sarah Kurtz, R. C. Reedy, M. Young, D. B. Jackrel, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris

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Abstract

Ca impurities are observed in GaInNAs grown by both molecular-beam epitaxy and metal organic chemical-vapor deposition by high-mass-resolution secondary-ion mass spectrometry measurements. The Ca appears to originate from the surface of the as-received GaAs substrates, and presumably comes from the polishing process used in substrate preparation. Ca was observed in samples grown by different growth methods and in different laboratories. No detectable Ca incorporates into epitaxial GaAs, although Ca levels as high as 1017 cm-3 are observed in GaInNAs. There are indications that the Ca impurities act as shallow acceptors in GaInNAs and may, at least in part, control the background acceptor concentrations. This has implications for high-current, p-i-n GaInNAs solar cells that require very low background doping to enhance current collection.

Original language	American English
Pages (from-to)	1540-1543
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	3
DOIs	https://doi.org/10.1116/1.2190664
State	Published - May 2006

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NREL/JA-520-38731

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10.1116/1.2190664

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Ptak, A. J., Friedman, D. J., Kurtz, S., Reedy, R. C., Young, M., Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., & Harris, J. S. (2006). Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24(3), 1540-1543. https://doi.org/10.1116/1.2190664

@article{0aa4811daddc4eebb5741ea7da14ac98,

title = "Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy",

abstract = "Ca impurities are observed in GaInNAs grown by both molecular-beam epitaxy and metal organic chemical-vapor deposition by high-mass-resolution secondary-ion mass spectrometry measurements. The Ca appears to originate from the surface of the as-received GaAs substrates, and presumably comes from the polishing process used in substrate preparation. Ca was observed in samples grown by different growth methods and in different laboratories. No detectable Ca incorporates into epitaxial GaAs, although Ca levels as high as 1017 cm-3 are observed in GaInNAs. There are indications that the Ca impurities act as shallow acceptors in GaInNAs and may, at least in part, control the background acceptor concentrations. This has implications for high-current, p-i-n GaInNAs solar cells that require very low background doping to enhance current collection.",

author = "Ptak, {A. J.} and Friedman, {D. J.} and Sarah Kurtz and Reedy, {R. C.} and M. Young and Jackrel, {D. B.} and Yuen, {H. B.} and Bank, {S. R.} and Wistey, {M. A.} and Harris, {J. S.}",

year = "2006",

month = may,

doi = "10.1116/1.2190664",

language = "American English",

volume = "24",

pages = "1540--1543",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

AU - Ptak, A. J.

AU - Friedman, D. J.

AU - Kurtz, Sarah

AU - Reedy, R. C.

AU - Young, M.

AU - Jackrel, D. B.

AU - Yuen, H. B.

AU - Bank, S. R.

AU - Wistey, M. A.

AU - Harris, J. S.

PY - 2006/5

Y1 - 2006/5

N2 - Ca impurities are observed in GaInNAs grown by both molecular-beam epitaxy and metal organic chemical-vapor deposition by high-mass-resolution secondary-ion mass spectrometry measurements. The Ca appears to originate from the surface of the as-received GaAs substrates, and presumably comes from the polishing process used in substrate preparation. Ca was observed in samples grown by different growth methods and in different laboratories. No detectable Ca incorporates into epitaxial GaAs, although Ca levels as high as 1017 cm-3 are observed in GaInNAs. There are indications that the Ca impurities act as shallow acceptors in GaInNAs and may, at least in part, control the background acceptor concentrations. This has implications for high-current, p-i-n GaInNAs solar cells that require very low background doping to enhance current collection.

AB - Ca impurities are observed in GaInNAs grown by both molecular-beam epitaxy and metal organic chemical-vapor deposition by high-mass-resolution secondary-ion mass spectrometry measurements. The Ca appears to originate from the surface of the as-received GaAs substrates, and presumably comes from the polishing process used in substrate preparation. Ca was observed in samples grown by different growth methods and in different laboratories. No detectable Ca incorporates into epitaxial GaAs, although Ca levels as high as 1017 cm-3 are observed in GaInNAs. There are indications that the Ca impurities act as shallow acceptors in GaInNAs and may, at least in part, control the background acceptor concentrations. This has implications for high-current, p-i-n GaInNAs solar cells that require very low background doping to enhance current collection.

UR - http://www.scopus.com/inward/record.url?scp=33744806662&partnerID=8YFLogxK

U2 - 10.1116/1.2190664

DO - 10.1116/1.2190664

M3 - Article

AN - SCOPUS:33744806662

SN - 1071-1023

VL - 24

SP - 1540

EP - 1543

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

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