Capacitance Characterization of Amorphous Silicon/Amorphous Silicon Germanium Heterostructures

    Research output: Contribution to conferencePaper


    We have performed voltage-pulse stimulated capacitance transient measurements along with other junction capacitance measurements on a-Si:H/a-Si,Ge:H heterostructures deposited on p-type crystalline silicon using the glow discharge technique. For a filling pulse that puts the c-Si/a-Si:H junction in forward bias, the capacitance transients consist of two components- a fast component correspondingto electron emission and a slow component corresponding to hole emission. For a fixed starting reverse bias, we have found that the density of trapped holes is proportional to the product of the filling pulse voltage and the filling pulse width and reaches a saturation value at a certain value of the product. These hole traps appear to reside at or very close to the a-Si:H/a-Si,Ge:H interface.The estimated trap concentration is around 10 (sup 11)/cm2 and is independent of the temperature and applied bias, ruling out the creation of the traps during the filling pulse. We also report results on samples in which a-Si:H/a-Si,Ge:H interface has been modified during growth to alter the concentration of the hole traps.
    Original languageAmerican English
    Number of pages6
    StatePublished - 1996
    EventAmorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California
    Duration: 8 Apr 199612 Apr 1996


    ConferenceAmorphous Silicon Technology 1996: Materials Research Society Symposium
    CitySan Francisco, California

    Bibliographical note

    Work performed by University of Oregon, Eugene, Oregon and United Solar Systems Corporation, Troy, Michigan

    NREL Publication Number

    • NREL/CP-23020


    Dive into the research topics of 'Capacitance Characterization of Amorphous Silicon/Amorphous Silicon Germanium Heterostructures'. Together they form a unique fingerprint.

    Cite this