Capacitance-Spectroscopy Identification of a Key Defect in N-Degraded GaInNAs Solar Cells

Sarah Kurtz, Steve Johnston, Howard M. Branz

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38 Scopus Citations

Abstract

We report a study comparing the device performance and the deep-level transient spectroscopy spectra of Ga 1-yIn yN xAs 1-x diodes. It is found that a transient capacitance signal, which corresponds to a trap 0.18 to 0.25 eV below the conduction-band edge, is observed near 140 K in the nitrogen-containing samples. The existence of this transient correlates with higher dark current [lower open-circuit voltage (V )] and the size of the transient increases with x for x≤0.6%. The abrupt decrease of the V with the addition of nitrogen is explained by the hypothesis that a close approach of the electron quasi-Fermi level to the conduction-band edge is arrested by the electron trap. The N-induced trap level reduces V as if it were a new conduction-band edge.

Original languageAmerican English
Article number113506
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number11
DOIs
StatePublished - 14 Mar 2005

NREL Publication Number

  • NREL/JA-520-38408

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