Abstract
We report a study comparing the device performance and the deep-level transient spectroscopy spectra of Ga 1-yIn yN xAs 1-x diodes. It is found that a transient capacitance signal, which corresponds to a trap 0.18 to 0.25 eV below the conduction-band edge, is observed near 140 K in the nitrogen-containing samples. The existence of this transient correlates with higher dark current [lower open-circuit voltage (V ∝)] and the size of the transient increases with x for x≤0.6%. The abrupt decrease of the V ∝ with the addition of nitrogen is explained by the hypothesis that a close approach of the electron quasi-Fermi level to the conduction-band edge is arrested by the electron trap. The N-induced trap level reduces V ∝ as if it were a new conduction-band edge.
Original language | American English |
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Article number | 113506 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 11 |
DOIs | |
State | Published - 14 Mar 2005 |
NREL Publication Number
- NREL/JA-520-38408