Abstract
Recently there has been clear evidence that local alloy disorder splits the DX center in multiple levels. This effect is observed by deep-level transient spectroscopy (DLTS) from different thermal emission rates for the multiple levels in AlxGa1-xAs. We report for the first time the simultaneous measurement of two capture barrier and two ionization entropies for the DX center in Se-doped AlxGa1-xAs. The Al xGa1-xAs was grown by metalorganic chemical vapor deposition at two different alloy compositions (x=0.19 and 0.23). We obtained the capture rates from a DLTS experiment by simultaneously monitoring the two transient signals while changing the filling pulse width. The capture rates show exponential temperature dependence from which the thermal capture barriers are extracted. Together with the emission rate values the ionization entropy is calculated after modifying the appropriate equations for a degenerate semiconductor (ND>1×1017 for AlGaAs). The results are discussed in the context of other published values.
Original language | American English |
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Pages (from-to) | 1425-1428 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 69 |
Issue number | 3 |
DOIs | |
State | Published - 1991 |
Bibliographical note
Work performed by Department of Physics, University of Denver, Denver, Colorado;NREL Publication Number
- ACNR/JA-213-12300