Abstract
All-perovskite tandem solar cells are promising for achieving photovoltaics with power conversion efficiencies above the detailed balance limit of single-junction cells, while retaining the low cost, light weight and other advantages associated with metal halide perovskite photovoltaics. However, the efficiency and stability of all-perovskite tandem cells are limited by the Sn–Pb-based narrow-bandgap perovskite cells. Here we show that the formation of quasi-two-dimensional (quasi-2D) structure (PEA)2GAPb2I7 from additives based on mixed bulky organic cations phenethylammonium (PEA+) and guanidinium (GA+) provides critical defect control to substantially improve the structural and optoelectronic properties of the narrow-bandgap (1.25 eV) Sn–Pb perovskite thin films. This 2D additive engineering results in Sn–Pb-based absorbers with low dark carrier density (~1.3 × 1014 cm−3), long bulk carrier lifetime (~9.2 μs) and low surface recombination velocity (~1.4 cm s−1), leading to 22.1%-efficient single-junction Sn–Pb perovskite cells and 25.5%-efficient all-perovskite two-terminal tandems with high photovoltage and long operational stability.
Original language | American English |
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Pages (from-to) | 642-651 |
Number of pages | 10 |
Journal | Nature Energy |
Volume | 7 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2022 |
Bibliographical note
Publisher Copyright:© 2022, The Author(s), under exclusive licence to Springer Nature Limited.
NREL Publication Number
- NREL/JA-5900-81222
Keywords
- carrier lifetime
- defect passivation
- perovskite
- tandem