Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe

Suhuai Wei

doi:10.1109/pvsc.2011.6186535

Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe

Suhuai Wei

Research output: Contribution to conference › Paper

Original language	American English
Pages	002833-002836
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.2011.6186535
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference (PVSC '11) - Seattle, Washington Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference (PVSC '11)
City	Seattle, Washington
Period	19/06/11 → 24/06/11

Bibliographical note

See NREL/CP-5200-50683 for preprint

NREL Publication Number

NREL/CP-5200-55765

Access to Document

10.1109/pvsc.2011.6186535

Cite this

@conference{a85bbabaac1e440e942351f0bfffc288,

title = "Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe",

author = "Suhuai Wei",

note = "See NREL/CP-5200-50683 for preprint; 37th IEEE Photovoltaic Specialists Conference (PVSC '11) ; Conference date: 19-06-2011 Through 24-06-2011",

year = "2011",

doi = "10.1109/pvsc.2011.6186535",

language = "American English",

pages = "002833--002836",

}

TY - CONF

T1 - Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe

AU - Wei, Suhuai

N1 - See NREL/CP-5200-50683 for preprint

PY - 2011

Y1 - 2011

U2 - 10.1109/pvsc.2011.6186535

DO - 10.1109/pvsc.2011.6186535

M3 - Paper

SP - 2833

EP - 2836

T2 - 37th IEEE Photovoltaic Specialists Conference (PVSC '11)

Y2 - 19 June 2011 through 24 June 2011

ER -