Carrier Density and Compensation in Semiconductors with Multiple Dopants and Multiple Transition Energy Levels: Case of Cu Impurities in CdTe: Article No. 245207

Suhuai Wei

doi:10.1103/PhysRevB.83.245207

Carrier Density and Compensation in Semiconductors with Multiple Dopants and Multiple Transition Energy Levels: Case of Cu Impurities in CdTe: Article No. 245207

Suhuai Wei

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.83.245207
State	Published - 2011

NREL Publication Number

NREL/JA-5900-51587

Keywords

charge carriers
doping
energy levels
multiple dopants

Access to Document

10.1103/PhysRevB.83.245207

Cite this

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title = "Carrier Density and Compensation in Semiconductors with Multiple Dopants and Multiple Transition Energy Levels: Case of Cu Impurities in CdTe: Article No. 245207",

keywords = "charge carriers, doping, energy levels, multiple dopants",

author = "Suhuai Wei",

year = "2011",

doi = "10.1103/PhysRevB.83.245207",

language = "American English",

volume = "83",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "24",

}

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T1 - Carrier Density and Compensation in Semiconductors with Multiple Dopants and Multiple Transition Energy Levels: Case of Cu Impurities in CdTe

T2 - Article No. 245207

AU - Wei, Suhuai

PY - 2011

Y1 - 2011

KW - charge carriers

KW - doping

KW - energy levels

KW - multiple dopants

U2 - 10.1103/PhysRevB.83.245207

DO - 10.1103/PhysRevB.83.245207

M3 - Article

SN - 1098-0121

VL - 83

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

ER -