Carrier Density and Compensation in Semiconductors with Multiple Dopants and Multiple Transition Energy Levels: Case of Cu Impurities in CdTe: Article No. 245207

Suhuai Wei

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - 2011

NREL Publication Number

  • NREL/JA-5900-51587


  • charge carriers
  • doping
  • energy levels
  • multiple dopants

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