Carrier Density and Lifetime for Different Dopants in Single-Crystal and Polycrystalline CdTe

Wyatt Metzger, Stuart Farrell, David Albin, Eric Colegrove, Matthew Reese, Joel Duenow, Darius Kuciauskas, James Burst

Research output: Contribution to journalArticlepeer-review

52 Scopus Citations

Abstract

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

Original languageAmerican English
Article number116102
Number of pages6
JournalAPL Materials
Volume4
Issue number11
DOIs
StatePublished - 1 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

NREL Publication Number

  • NREL/JA-5K00-66107

Keywords

  • doping
  • hole density
  • II-VI semiconductors
  • photoluminescence
  • sodium

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