Carrier Density and Lifetime for Different Dopants in Single-Crystal and Polycrystalline CdTe

Wyatt Metzger; Stuart Farrell; David Albin; Eric Colegrove; Matthew Reese; Joel Duenow; Darius Kuciauskas; James Burst

doi:10.1063/1.4966209

Carrier Density and Lifetime for Different Dopants in Single-Crystal and Polycrystalline CdTe

Wyatt Metzger, Stuart Farrell, David Albin, Eric Colegrove, Matthew Reese, Joel Duenow, Darius Kuciauskas, James Burst

Research output: Contribution to journal › Article › peer-review

55 Scopus Citations

Abstract

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10¹⁶ cm^-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10¹⁶ cm^-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl₂ or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

Original language	American English
Article number	116102
Number of pages	6
Journal	APL Materials
Volume	4
Issue number	11
DOIs	https://doi.org/10.1063/1.4966209 https://doi.org/10.1063/1.4966209
State	Published - 1 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

NREL Publication Number

NREL/JA-5K00-66107

Keywords

doping
hole density
II-VI semiconductors
photoluminescence
sodium

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abstract = "CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.",

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AU - Metzger, Wyatt

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AU - Albin, David

AU - Colegrove, Eric

AU - Reese, Matthew

AU - Duenow, Joel

AU - Kuciauskas, Darius

AU - Burst, James

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AB - CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

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Carrier Density and Lifetime for Different Dopants in Single-Crystal and Polycrystalline CdTe

Abstract

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Keywords

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