Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Deborah McGott, Brian Good, Brian Fluegel, Joel Duenow, Colin Wolden, Matthew Reese

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


Time-resolved photoluminescence (TRPL) with two excitation wavelengths - 670 (standard) and 405 nm - was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSexTe1-x and the use of MgyZn1-yO buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for MgyZn1-yO/CdSexTe1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSexTe1-x films grown on Al2O3, which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

Original languageAmerican English
Number of pages3
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021


Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale

Bibliographical note

See NREL/CP-5K00-80545 for preprint

NREL Publication Number

  • NREL/CP-5K00-81139


  • cadmium telluride
  • CdSeTe
  • front interface
  • MZO
  • TRPL


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