Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Deborah McGott; Brian Good; Brian Fluegel; Joel Duenow; Colin Wolden; Matthew Reese

doi:10.1109/PVSC43889.2021.9518914

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Deborah McGott, Brian Good, Brian Fluegel, Joel Duenow, Colin Wolden, Matthew Reese

Materials Science

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Time-resolved photoluminescence (TRPL) with two excitation wavelengths - 670 (standard) and 405 nm - was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSexTe1-x and the use of MgyZn1-yO buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for MgyZn1-yO/CdSexTe1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSexTe1-x films grown on Al2O3, which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

Original language	American English
Pages	1301-1303
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518914 https://doi.org/10.1109/PVSC43889.2021.9518914
State	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Bibliographical note

See NREL/CP-5K00-80545 for preprint

NREL Publication Number

NREL/CP-5K00-81139

Keywords

cadmium telluride
CdSeTe
front interface
MZO
TRPL

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McGott, D., Good, B., Fluegel, B., Duenow, J., Wolden, C., & Reese, M. (2021). Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO. 1301-1303. Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States. https://doi.org/10.1109/PVSC43889.2021.9518914, https://doi.org/10.1109/PVSC43889.2021.9518914

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abstract = "Time-resolved photoluminescence (TRPL) with two excitation wavelengths - 670 (standard) and 405 nm - was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSexTe1-x and the use of MgyZn1-yO buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for MgyZn1-yO/CdSexTe1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSexTe1-x films grown on Al2O3, which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.",

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McGott, D, Good, B, Fluegel, B, Duenow, J, Wolden, C & Reese, M 2021, 'Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO', Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21 - 25/06/21 pp. 1301-1303. https://doi.org/10.1109/PVSC43889.2021.9518914, https://doi.org/10.1109/PVSC43889.2021.9518914

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AU - McGott, Deborah

AU - Good, Brian

AU - Fluegel, Brian

AU - Duenow, Joel

AU - Wolden, Colin

AU - Reese, Matthew

N1 - See NREL/CP-5K00-80545 for preprint

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Time-resolved photoluminescence (TRPL) with two excitation wavelengths - 670 (standard) and 405 nm - was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSexTe1-x and the use of MgyZn1-yO buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for MgyZn1-yO/CdSexTe1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSexTe1-x films grown on Al2O3, which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

AB - Time-resolved photoluminescence (TRPL) with two excitation wavelengths - 670 (standard) and 405 nm - was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSexTe1-x and the use of MgyZn1-yO buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for MgyZn1-yO/CdSexTe1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSexTe1-x films grown on Al2O3, which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

KW - cadmium telluride

KW - CdSeTe

KW - front interface

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T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

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ER -

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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