Carrier Relaxation Mechanisms in Self-Assembled (In,Ga)As/GaAs Quantum Dots: Efficient P --> S Auger Relaxation of Electrons: Article No. 075403

doi:10.1103/PhysRevB.74.075403

Carrier Relaxation Mechanisms in Self-Assembled (In,Ga)As/GaAs Quantum Dots: Efficient P --> S Auger Relaxation of Electrons: Article No. 075403

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	74
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.74.075403
State	Published - 2006

NREL Publication Number

NREL/JA-520-39898

Access to Document

10.1103/PhysRevB.74.075403

Cite this

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title = "Carrier Relaxation Mechanisms in Self-Assembled (In,Ga)As/GaAs Quantum Dots: Efficient P --> S Auger Relaxation of Electrons: Article No. 075403",

author = "NREL",

year = "2006",

doi = "10.1103/PhysRevB.74.075403",

language = "American English",

volume = "74",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

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PY - 2006

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DO - 10.1103/PhysRevB.74.075403

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VL - 74

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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