Carrier Separation at Dislocation Pairs in CdTe

Chen Li, Yelong Wu, Timothy J. Pennycook, Andrew R. Lupini, Donovan N. Leonard, Wanjian Yin, Naba Paudel, Mowafak Al-Jassim, Yanfa Yan, Stephen J. Pennycook

Research output: Contribution to journalArticlepeer-review

55 Scopus Citations


Through the use of aberration corrected scanning transmission electron microscopy, the atomic configuration of CdTe intragrain Shockley partial dislocation pairs has been determined: Single Cd and Te columns are present at opposite ends of both intrinsic and extrinsic stacking faults. These columns have threefold and fivefold coordination, indicating the presence of dangling bonds. Counterintuitively, density-functional theory calculations show that these dislocation cores do not act as recombination centers; instead, they lead to local band bending that separates electrons and holes and reduces undesirable carrier recombination.

Original languageAmerican English
Article numberArticle No. 096403
Number of pages5
JournalPhysical Review Letters
Issue number9
StatePublished - 29 Aug 2013

NREL Publication Number

  • NREL/JA-5200-60561


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