Carrier Transport in Ordered and Disordered In0.53Ga0.47As

R. K. Ahrenkiel; S. P. Ahrenkiel; D. J. Arent; J. M. Olson; M. Wanlass

Carrier Transport in Ordered and Disordered In0.53Ga0.47As

R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, J. M. Olson, M. Wanlass

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Ga_0.47In_0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 μs wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.

Original language	American English
Pages	181-186
Number of pages	6
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 5 Dec 1996

Conference

Conference	Proceedings of the 1996 MRS Fall Meeting
City	Boston, MA, USA
Period	2/12/96 → 5/12/96

NREL Publication Number

NREL/CP-520-22229

Cite this

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title = "Carrier Transport in Ordered and Disordered In0.53Ga0.47As",

abstract = "Ga0.47In0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 μs wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.",

author = "Ahrenkiel, {R. K.} and Ahrenkiel, {S. P.} and Arent, {D. J.} and Olson, {J. M.} and M. Wanlass",

year = "1997",

language = "American English",

pages = "181--186",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 05-12-1996",

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TY - CONF

T1 - Carrier Transport in Ordered and Disordered In0.53Ga0.47As

AU - Ahrenkiel, R. K.

AU - Ahrenkiel, S. P.

AU - Arent, D. J.

AU - Olson, J. M.

AU - Wanlass, M.

PY - 1997

Y1 - 1997

N2 - Ga0.47In0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 μs wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.

AB - Ga0.47In0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 μs wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.

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M3 - Paper

AN - SCOPUS:0030658527

SP - 181

EP - 186

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 5 December 1996

ER -

Carrier Transport in Ordered and Disordered In0.53Ga0.47As

Abstract

Conference

NREL Publication Number

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