Carrier Transport in Ordered and Disordered In0.53Ga0.47As

R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, J. M. Olson, M. Wanlass

Research output: Contribution to conferencePaperpeer-review


Ga0.47In0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 μs wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.

Original languageAmerican English
Number of pages6
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 2 Dec 19965 Dec 1996


ConferenceProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-520-22229


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