Carrier Transport in Ordered and Disordered In0.53Ga0.47As

R. K. Ahrenkiel; S. P. Ahrenkiel; D. J. Arent; J. M. Olson

doi:10.1063/1.118214

Carrier Transport in Ordered and Disordered In0.53Ga0.47As

R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, J. M. Olson

National Renewable Energy Laboratory

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Abstract

Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In_0.53Ga_0.47As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley-Read-Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed.

Original language	American English
Pages (from-to)	756-758
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	6
DOIs	https://doi.org/10.1063/1.118214 https://doi.org/10.1063/1.118214
State	Published - 1997

NREL Publication Number

NREL/JA-530-22234

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abstract = "Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In0.53Ga0.47As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley-Read-Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed.",

author = "Ahrenkiel, {R. K.} and Ahrenkiel, {S. P.} and Arent, {D. J.} and Olson, {J. M.}",

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AU - Olson, J. M.

PY - 1997

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AB - Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In0.53Ga0.47As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley-Read-Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed.

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ER -

Carrier Transport in Ordered and Disordered In0.53Ga0.47As

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