Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell

Ingrid Repins; Sanjoy Paul; Istvan Gulyas; Shin Mou; Jian Li

doi:10.1016/j.tsf.2019.01.052

Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell

Ingrid Repins, Sanjoy Paul, Istvan Gulyas, Shin Mou, Jian Li

Materials Science

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu ₂ ZnSnSe ₄ (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

Original language	American English
Pages (from-to)	103-108
Number of pages	6
Journal	Thin Solid Films
Volume	675
DOIs	https://doi.org/10.1016/j.tsf.2019.01.052 https://doi.org/10.1016/j.tsf.2019.01.052
State	Published - 1 Apr 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

NREL Publication Number

NREL/JA-5K00-72459

Keywords

Admittance spectroscopy
And grain boundaries
Band-tailing
Charge transport
Kesterite solar cell
Mobility
Resistivity

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title = "Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell",

abstract = " We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.",

keywords = "Admittance spectroscopy, And grain boundaries, Band-tailing, Charge transport, Kesterite solar cell, Mobility, Resistivity",

author = "Ingrid Repins and Sanjoy Paul and Istvan Gulyas and Shin Mou and Jian Li",

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doi = "10.1016/j.tsf.2019.01.052",

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TY - JOUR

T1 - Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell

AU - Repins, Ingrid

AU - Paul, Sanjoy

AU - Gulyas, Istvan

AU - Mou, Shin

AU - Li, Jian

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

AB - We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

KW - Admittance spectroscopy

KW - And grain boundaries

KW - Band-tailing

KW - Charge transport

KW - Kesterite solar cell

KW - Mobility

KW - Resistivity

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U2 - 10.1016/j.tsf.2019.01.052

DO - 10.1016/j.tsf.2019.01.052

M3 - Article

AN - SCOPUS:85062046053

SN - 0040-6090

VL - 675

SP - 103

EP - 108

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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