Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell

Ingrid Repins, Sanjoy Paul, Istvan Gulyas, Shin Mou, Jian Li

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations

Abstract

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu2ZnSnSe4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ~60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.
Original languageAmerican English
Pages (from-to)103-108
Number of pages6
JournalThin Solid Films
Volume675
DOIs
StatePublished - 2019

NREL Publication Number

  • NREL/JA-5K00-72459

Keywords

  • admittance spectroscopy
  • band-tailing
  • charge transport
  • grain boundaries
  • kesterite solar cell
  • mobility
  • resistivity

Fingerprint

Dive into the research topics of 'Carrier Transport Properties in a Thin-Film Cu2ZnSnSe4 Solar Cell'. Together they form a unique fingerprint.

Cite this