Abstract
We investigate the distribution of Cu acceptor states in CdTe thin films used in high-efficiency solar cells. These states are CuCd and Cui+-VCd- complexes, which are relatively deep and shallow acceptors, respectively. Cathodoluminescence spectroscopy and imaging show that, first, CuCd and Cu i+-VCd- do not coexist and, second, the primary diffuser is represented by Cui+-V Cd- complexes. Our results are used to discuss the effect of grain boundaries on Cu diffusion.
Original language | American English |
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Pages (from-to) | 2962-2964 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 16 |
DOIs | |
State | Published - 2002 |
NREL Publication Number
- NREL/JA-520-32453