Abstract
We investigate the distribution of Cu acceptor states in CdTe thin films used in high-efficiency solar cells. These states are CuCd and Cui+-VCd- complexes, which are relatively deep and shallow acceptors, respectively. Cathodoluminescence spectroscopy and imaging show that, first, CuCd and Cu i+-VCd- do not coexist and, second, the primary diffuser is represented by Cui+-V Cd- complexes. Our results are used to discuss the effect of grain boundaries on Cu diffusion.
| Original language | American English |
|---|---|
| Pages (from-to) | 2962-2964 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2002 |
NLR Publication Number
- NREL/JA-520-32453