CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdTe

W. K. Metzger; D. Albin; M. J. Romero; P. Dippo; M. Young

doi:10.1063/1.2196127

CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdTe

W. K. Metzger
, D. Albin
, M. J. Romero
, P. Dippo
, M. Young

Center for Energy Conversion and Storage Systems

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

94 Scopus Citations

Abstract

Time-resolved photoluminescence measurements on glassSn O2 CdTe and glassSn O2 CdTeCdS structures indicate that the Cd Cl2 process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the Cd Cl2 treatment.

Original language	American English
Article number	103703
Number of pages	6
Journal	Journal of Applied Physics
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.2196127 https://doi.org/10.1063/1.2196127
State	Published - 15 May 2006

NLR Publication Number

NREL/JA-520-39298

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@article{9e40def4b55d456298f34b0f0bfb19d8,

title = "CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdTe",

abstract = "Time-resolved photoluminescence measurements on glassSn O2 CdTe and glassSn O2 CdTeCdS structures indicate that the Cd Cl2 process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the Cd Cl2 treatment.",

author = "Metzger, \{W. K.\} and D. Albin and Romero, \{M. J.\} and P. Dippo and M. Young",

year = "2006",

month = may,

day = "15",

doi = "10.1063/1.2196127",

language = "American English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdTe

AU - Metzger, W. K.

AU - Albin, D.

AU - Romero, M. J.

AU - Dippo, P.

AU - Young, M.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - Time-resolved photoluminescence measurements on glassSn O2 CdTe and glassSn O2 CdTeCdS structures indicate that the Cd Cl2 process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the Cd Cl2 treatment.

AB - Time-resolved photoluminescence measurements on glassSn O2 CdTe and glassSn O2 CdTeCdS structures indicate that the Cd Cl2 process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the Cd Cl2 treatment.

UR - https://www.scopus.com/pages/publications/33744830607

U2 - 10.1063/1.2196127

DO - 10.1063/1.2196127

M3 - Article

AN - SCOPUS:33744830607

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103703

ER -

CdCl2 Treatment, S Diffusion, and Recombination in Polycrystalline CdTe

Abstract

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