CdS/CdTe Interface Analysis by Transmission Electron Microscopy

R. G. Dhere, M. M. Al-Jassim, Y. Yan, K. M. Jones, H. R. Moutinho, T. A. Gessert, P. Sheldon, L. L. Kazmerski

Research output: Contribution to journalArticlepeer-review

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Transmission electron microscopy (TEM) analysis of different structures shows that the growth of close-spaced sublimation (CSS) CdTe is columnar. The grain size of the CdTe is determined by the growth temperature and independent of the grain size of the underlying CdS layer. The planar defect density in CdTe increases with substrate temperature whereas the threading dislocation density goes down. There is no significant change in the microstructure after CdCl2 heat treatment. The crystallinity of the CdS did not show any significant effect on the defect generation at the interface. CdTe films grown on single-crystal CdTe substrates are quasiepitaxial with a low defect density under optimal conditions.

Original languageAmerican English
Pages (from-to)1604-1608
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4 II
StatePublished - 2000
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 25 Oct 199929 Oct 1999

NREL Publication Number

  • NREL/JA-520-27515


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