CdS/CdTe Interface Analysis by Transmission Electron Microscopy

R. G. Dhere; M. M. Al-Jassim; Y. Yan; K. M. Jones; H. R. Moutinho; T. A. Gessert; P. Sheldon; L. L. Kazmerski

doi:10.1116/1.582393

CdS/CdTe Interface Analysis by Transmission Electron Microscopy

R. G. Dhere, M. M. Al-Jassim, Y. Yan, K. M. Jones, H. R. Moutinho, T. A. Gessert, P. Sheldon, L. L. Kazmerski

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

Transmission electron microscopy (TEM) analysis of different structures shows that the growth of close-spaced sublimation (CSS) CdTe is columnar. The grain size of the CdTe is determined by the growth temperature and independent of the grain size of the underlying CdS layer. The planar defect density in CdTe increases with substrate temperature whereas the threading dislocation density goes down. There is no significant change in the microstructure after CdCl₂ heat treatment. The crystallinity of the CdS did not show any significant effect on the defect generation at the interface. CdTe films grown on single-crystal CdTe substrates are quasiepitaxial with a low defect density under optimal conditions.

Original language	American English
Pages (from-to)	1604-1608
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 II
DOIs	https://doi.org/10.1116/1.582393 https://doi.org/10.1116/1.582393
State	Published - 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

NREL Publication Number

NREL/JA-520-27515

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@article{80b96f90e20e4e36bbe623851b1a5687,

title = "CdS/CdTe Interface Analysis by Transmission Electron Microscopy",

abstract = "Transmission electron microscopy (TEM) analysis of different structures shows that the growth of close-spaced sublimation (CSS) CdTe is columnar. The grain size of the CdTe is determined by the growth temperature and independent of the grain size of the underlying CdS layer. The planar defect density in CdTe increases with substrate temperature whereas the threading dislocation density goes down. There is no significant change in the microstructure after CdCl2 heat treatment. The crystallinity of the CdS did not show any significant effect on the defect generation at the interface. CdTe films grown on single-crystal CdTe substrates are quasiepitaxial with a low defect density under optimal conditions.",

author = "Dhere, {R. G.} and Al-Jassim, {M. M.} and Y. Yan and Jones, {K. M.} and Moutinho, {H. R.} and Gessert, {T. A.} and P. Sheldon and Kazmerski, {L. L.}",

year = "2000",

doi = "10.1116/1.582393",

language = "American English",

volume = "18",

pages = "1604--1608",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 II",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

}

TY - JOUR

T1 - CdS/CdTe Interface Analysis by Transmission Electron Microscopy

AU - Dhere, R. G.

AU - Al-Jassim, M. M.

AU - Yan, Y.

AU - Jones, K. M.

AU - Moutinho, H. R.

AU - Gessert, T. A.

AU - Sheldon, P.

AU - Kazmerski, L. L.

PY - 2000

Y1 - 2000

N2 - Transmission electron microscopy (TEM) analysis of different structures shows that the growth of close-spaced sublimation (CSS) CdTe is columnar. The grain size of the CdTe is determined by the growth temperature and independent of the grain size of the underlying CdS layer. The planar defect density in CdTe increases with substrate temperature whereas the threading dislocation density goes down. There is no significant change in the microstructure after CdCl2 heat treatment. The crystallinity of the CdS did not show any significant effect on the defect generation at the interface. CdTe films grown on single-crystal CdTe substrates are quasiepitaxial with a low defect density under optimal conditions.

AB - Transmission electron microscopy (TEM) analysis of different structures shows that the growth of close-spaced sublimation (CSS) CdTe is columnar. The grain size of the CdTe is determined by the growth temperature and independent of the grain size of the underlying CdS layer. The planar defect density in CdTe increases with substrate temperature whereas the threading dislocation density goes down. There is no significant change in the microstructure after CdCl2 heat treatment. The crystallinity of the CdS did not show any significant effect on the defect generation at the interface. CdTe films grown on single-crystal CdTe substrates are quasiepitaxial with a low defect density under optimal conditions.

UR - http://www.scopus.com/inward/record.url?scp=0034230216&partnerID=8YFLogxK

U2 - 10.1116/1.582393

DO - 10.1116/1.582393

M3 - Article

AN - SCOPUS:0034230216

SN - 0734-2101

VL - 18

SP - 1604

EP - 1608

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 II

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

CdS/CdTe Interface Analysis by Transmission Electron Microscopy

Abstract

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