CdS/CdTe Interface Analysis by Transmission Electron Microscopy

Engineering

• Defect Density 100%
• Substrate Temperature 50%
• Dislocation Density 50%
• Cdte Film 50%
• Heat Treatment 50%
• Significant Change 50%
• Spaced Sublimation 50%
• Cdte Crystal 50%
• Optimal Condition 50%
• Growth Temperature 50%
• Threading Dislocation 50%
• Crystallinity 50%

Material Science

• Defect Density 100%
• Transmission Electron Microscopy 100%
• Grain Size 100%
• Film 50%
• Density 50%
• Electron Microscopy 50%
• Heat Treatment 50%
• Single Crystal 50%