Abstract
This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zince stannate films have high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibithigher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cs2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced.
| Original language | American English |
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| Number of pages | 7 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25656