CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer

Research output: Contribution to conferencePaper

Abstract

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zince stannate films have high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibithigher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cs2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced.
Original languageAmerican English
Number of pages7
StatePublished - 1998
EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
Duration: 8 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovoltaics Program Review Meeting
CityDenver, Colorado
Period8/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25656

Fingerprint

Dive into the research topics of 'CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer'. Together they form a unique fingerprint.

Cite this