CdS/CuInSe2 Heterojunction Cell Research

    Research output: NRELTechnical Report


    The objective of this research is (1) to fabricate and characterize CuinSe2 thin films and (2) to fabricate and characterize CdS/CuinSe2 solar cells. The material can be deposited either n-or p-type with mobilities of up to 150 cm2/V s and carrier concentrations ranging from 10^13-10^20 cm-3. X-ray diffraction reveals a single phase with strong preferred orientation along <211> and <112>directions. The basic device structure of the cell consists of two CuInSe2 layers, varying in the stoichiometry of elements and electrical properties, and two layers of CdS. Composition studies as well as electrical property measurements of the two layers were carried out to illustrate the role of the two layers of CuInSe2. The methods used and results are discussed in detail and a conclusion isdrawn as to whether the two layers in an actual device can be eliminated by using a single layer of intermediate composition and electrical properties.
    Original languageAmerican English
    Number of pages8
    StatePublished - 1984

    NREL Publication Number

    • NREL/TP-212-2323


    • solar cells
    • thin films


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