CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Darius Kuciauskas, Adam Danielson, Carey Reich, Siming Li, Arthur Onno, William Weigand, Anna Kindvall, Amit Munshi, Zachary Holman, Walajabad Sampath

Research output: Contribution to conferencePaper

3 Scopus Citations

Abstract

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.
Original languageAmerican English
Number of pages2
DOIs
StatePublished - 2021
Event2020 47th IEEE Photovoltaic Specialists Conference (PVSC) - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Conference

Conference2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
CityCalgary, Canada
Period15/06/2021/08/20

NREL Publication Number

  • NREL/CP-5900-79331

Keywords

  • aluminum oxide
  • cadmium selenide telluride
  • interface recombination
  • time-resolved photoluminescence

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