CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Darius Kuciauskas; Adam Danielson; Carey Reich; Siming Li; Arthur Onno; William Weigand; Anna Kindvall; Amit Munshi; Zachary Holman; Walajabad Sampath

doi:10.1109/PVSC45281.2020.9300624

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Darius Kuciauskas, Adam Danielson, Carey Reich, Siming Li, Arthur Onno, William Weigand, Anna Kindvall, Amit Munshi, Zachary Holman, Walajabad Sampath

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

Original language	American English
Pages	1811-1812
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300624 https://doi.org/10.1109/PVSC45281.2020.9300624
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-79331

Keywords

Aluminum oxide
Cadmium selenide telluride
Interface recombination
Time-resolved photoluminescence

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Kuciauskas, D., Danielson, A., Reich, C., Li, S., Onno, A., Weigand, W., Kindvall, A., Munshi, A., Holman, Z., & Sampath, W. (2020). CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping. 1811-1812. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9300624, https://doi.org/10.1109/PVSC45281.2020.9300624

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abstract = "Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.",

keywords = "Aluminum oxide, Cadmium selenide telluride, Interface recombination, Time-resolved photoluminescence",

author = "Darius Kuciauskas and Adam Danielson and Carey Reich and Siming Li and Arthur Onno and William Weigand and Anna Kindvall and Amit Munshi and Zachary Holman and Walajabad Sampath",

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doi = "10.1109/PVSC45281.2020.9300624",

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Kuciauskas, D, Danielson, A, Reich, C, Li, S, Onno, A, Weigand, W, Kindvall, A, Munshi, A, Holman, Z & Sampath, W 2020, 'CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 1811-1812. https://doi.org/10.1109/PVSC45281.2020.9300624, https://doi.org/10.1109/PVSC45281.2020.9300624

TY - CONF

T1 - CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

AU - Kuciauskas, Darius

AU - Danielson, Adam

AU - Reich, Carey

AU - Li, Siming

AU - Onno, Arthur

AU - Weigand, William

AU - Kindvall, Anna

AU - Munshi, Amit

AU - Holman, Zachary

AU - Sampath, Walajabad

PY - 2020/6/14

Y1 - 2020/6/14

N2 - Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

AB - Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

KW - Aluminum oxide

KW - Cadmium selenide telluride

KW - Interface recombination

KW - Time-resolved photoluminescence

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U2 - 10.1109/PVSC45281.2020.9300624

DO - 10.1109/PVSC45281.2020.9300624

M3 - Paper

AN - SCOPUS:85099585052

SP - 1811

EP - 1812

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Abstract

Conference

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NREL Publication Number

Keywords

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