CdSxTe1-x Alloying in CdS/CdTe Solar Cells

Joel N. Duenow; Ramesh G. Dhere; Helio R. Moutinho; Bobby To; Joel W. Pankow; Darius Kuciauskas; Timothy A. Gessert

doi:10.1557/opl.2011.1151

CdSxTe1-x Alloying in CdS/CdTe Solar Cells

Joel N. Duenow, Ramesh G. Dhere, Helio R. Moutinho, Bobby To, Joel W. Pankow, Darius Kuciauskas, Timothy A. Gessert

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

A CdS _xTe _1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS _xTe _1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS _xTe _1-x region. Further understanding, however, is essential to predict the role of this CdS _xTe _1-x layer in the operation of CdS/CdTe devices. In this study, CdS _xTe _1-x alloy films were deposited by radio-frequency magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdS _xTe _1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl ₂ heat treatment at ∼400°C for 5 min. Films sputtered in a 1% O ₂/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl ₂ heat treatment. Films sputtered in O ₂ partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

Original language	American English
Pages	63-68
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1151 https://doi.org/10.1557/opl.2011.1151
State	Published - 2012
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Apr 2011 → 29 Apr 2011

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

NREL Publication Number

NREL/CP-5200-51737

Other Report Number

Paper No. 1324-D14-03

Keywords

CdTe photovoltaic
PV
solar
thin film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "CdSxTe1-x Alloying in CdS/CdTe Solar Cells",

abstract = "A CdS xTe 1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS xTe 1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS xTe 1-x region. Further understanding, however, is essential to predict the role of this CdS xTe 1-x layer in the operation of CdS/CdTe devices. In this study, CdS xTe 1-x alloy films were deposited by radio-frequency magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdS xTe 1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl 2 heat treatment at ∼400°C for 5 min. Films sputtered in a 1% O 2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl 2 heat treatment. Films sputtered in O 2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.",

keywords = "CdTe photovoltaic, PV, solar, thin film",

author = "Duenow, {Joel N.} and Dhere, {Ramesh G.} and Moutinho, {Helio R.} and Bobby To and Pankow, {Joel W.} and Darius Kuciauskas and Gessert, {Timothy A.}",

year = "2012",

doi = "10.1557/opl.2011.1151",

language = "American English",

pages = "63--68",

note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

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AU - Duenow, Joel N.

AU - Dhere, Ramesh G.

AU - Moutinho, Helio R.

AU - To, Bobby

AU - Pankow, Joel W.

AU - Kuciauskas, Darius

AU - Gessert, Timothy A.

PY - 2012

Y1 - 2012

N2 - A CdS xTe 1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS xTe 1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS xTe 1-x region. Further understanding, however, is essential to predict the role of this CdS xTe 1-x layer in the operation of CdS/CdTe devices. In this study, CdS xTe 1-x alloy films were deposited by radio-frequency magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdS xTe 1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl 2 heat treatment at ∼400°C for 5 min. Films sputtered in a 1% O 2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl 2 heat treatment. Films sputtered in O 2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

AB - A CdS xTe 1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS xTe 1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS xTe 1-x region. Further understanding, however, is essential to predict the role of this CdS xTe 1-x layer in the operation of CdS/CdTe devices. In this study, CdS xTe 1-x alloy films were deposited by radio-frequency magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdS xTe 1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl 2 heat treatment at ∼400°C for 5 min. Films sputtered in a 1% O 2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl 2 heat treatment. Films sputtered in O 2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

KW - CdTe photovoltaic

KW - PV

KW - solar

KW - thin film

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DO - 10.1557/opl.2011.1151

M3 - Paper

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T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -

CdSxTe1-x Alloying in CdS/CdTe Solar Cells

Abstract

Conference

NREL Publication Number

Other Report Number

Keywords

UN SDGs

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