CdTe-InSb Heterostructures Grown By Organometallic-Vapor-Phase Epitaxy: Preparation and Electrical Properties

Research output: Contribution to journal › Article

Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

NREL Publication Number

@article{a2fa841345974999a1dce6a2643a8c3a,

title = "CdTe-InSb Heterostructures Grown By Organometallic-Vapor-Phase Epitaxy: Preparation and Electrical Properties",

author = "NREL",

note = "Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York",

year = "1986",

doi = "10.1016/0038-1101(86)90048-1",

language = "American English",

volume = "29",

pages = "257--260",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "2",

}

TY - JOUR

T1 - CdTe-InSb Heterostructures Grown By Organometallic-Vapor-Phase Epitaxy: Preparation and Electrical Properties

AU - NREL, null

N1 - Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

PY - 1986

Y1 - 1986

U2 - 10.1016/0038-1101(86)90048-1

DO - 10.1016/0038-1101(86)90048-1

M3 - Article

SN - 0038-1101

VL - 29

SP - 257

EP - 260

JO - Solid State Electronics

JF - Solid State Electronics

IS - 2

ER -