CdTe Photoluminescence: Comparison of Solar-Cell Material with Surface-Modified Single Crystals

C. R. Corwine; J. R. Sites; T. A. Gessert; W. K. Metzger; P. Dippo; Jingbo Li; A. Duda; G. Teeter

doi:10.1063/1.1935752

CdTe Photoluminescence: Comparison of Solar-Cell Material with Surface-Modified Single Crystals

C. R. Corwine, J. R. Sites, T. A. Gessert, W. K. Metzger, P. Dippo, Jingbo Li, A. Duda, G. Teeter

Materials Science

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400°C in an oxidizing atmosphere, but not under other tested conditions. A similar peak is seen in polycrystalline thin-film CdTe samples, which are known to contain copper and oxygen impurities. First-principles band structure calculations determined the likely defect assignment as a transition between a Cui-OTe donor complex and the valence band.

Original language	American English
Article number	221909
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	22
DOIs	https://doi.org/10.1063/1.1935752 https://doi.org/10.1063/1.1935752
State	Published - 2005

NREL Publication Number

NREL/JA-520-36984

Access to Document

Cite this

@article{cffe1be3182a431cb8dcab0a6e3559e0,

title = "CdTe Photoluminescence: Comparison of Solar-Cell Material with Surface-Modified Single Crystals",

abstract = "Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400°C in an oxidizing atmosphere, but not under other tested conditions. A similar peak is seen in polycrystalline thin-film CdTe samples, which are known to contain copper and oxygen impurities. First-principles band structure calculations determined the likely defect assignment as a transition between a Cui-OTe donor complex and the valence band.",

author = "Corwine, {C. R.} and Sites, {J. R.} and Gessert, {T. A.} and Metzger, {W. K.} and P. Dippo and Jingbo Li and A. Duda and G. Teeter",

year = "2005",

doi = "10.1063/1.1935752",

language = "American English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - CdTe Photoluminescence: Comparison of Solar-Cell Material with Surface-Modified Single Crystals

AU - Corwine, C. R.

AU - Sites, J. R.

AU - Gessert, T. A.

AU - Metzger, W. K.

AU - Dippo, P.

AU - Li, Jingbo

AU - Duda, A.

AU - Teeter, G.

PY - 2005

Y1 - 2005

N2 - Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400°C in an oxidizing atmosphere, but not under other tested conditions. A similar peak is seen in polycrystalline thin-film CdTe samples, which are known to contain copper and oxygen impurities. First-principles band structure calculations determined the likely defect assignment as a transition between a Cui-OTe donor complex and the valence band.

AB - Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400°C in an oxidizing atmosphere, but not under other tested conditions. A similar peak is seen in polycrystalline thin-film CdTe samples, which are known to contain copper and oxygen impurities. First-principles band structure calculations determined the likely defect assignment as a transition between a Cui-OTe donor complex and the valence band.

UR - http://www.scopus.com/inward/record.url?scp=20844438649&partnerID=8YFLogxK

U2 - 10.1063/1.1935752

DO - 10.1063/1.1935752

M3 - Article

AN - SCOPUS:20844438649

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221909

ER -

CdTe Photoluminescence: Comparison of Solar-Cell Material with Surface-Modified Single Crystals

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this