Abstract
Most recent gains in CdTe photovoltaic (PV) device efficiency have been in short-circuit current density (Jsc) and fill factor (FF), rather than open-circuit voltage (Voc). Because Jsc is nearing its theoretical limit, further improvements in device efficiency will require increasing Voc beyond 860 mV and increasing FF. Voc and FF may be improved by increasing both the carrier concentration and minority-carrier lifetime of the CdTe. However, Voc may be limited for other reasons, including Fermi-level pinning and surface recombination. In this study, we used doped CdTe single crystals to test whether higher carrier concentration and lifetime can overcome traditional Voc barriers. In our work to date, we have fabricated heterojunction CdTe PV cells with Voc up to 929 mV, FF of ∼60%, and efficiencies of 10%.
Original language | American English |
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Pages | 2310-2313 |
Number of pages | 4 |
DOIs | |
State | Published - 2014 |
Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014 |
Conference
Conference | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
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Country/Territory | United States |
City | Denver |
Period | 8/06/14 → 13/06/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NREL Publication Number
- NREL/CP-5K00-61275
Keywords
- cadmium compounds
- current-voltage characteristics
- heterojunctions
- II-VI semiconductor materials
- photovoltaic cells
- solar energy