CdTe Synthesis and Crystal Growth Using the High-Pressure Bridgman Technique

Tawfeeq K. Al-Hamdi, Seth W. McPherson, Santosh K. Swain, Joshah Jennings, Joel N. Duenow, X. Zheng, D. S. Albin, T. Ablekim, E. Colegrove, M. Amarasinghe, Andrew Ferguson, Wyatt K. Metzger, Csaba Szeles, Kelvin G. Lynn

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


Efficient, safe and cost-effective synthesis of CdTe from elements is rather challenging in silica sealed ampoules due to the high vapor pressure of Cd. In this article, we report on the integrated synthesis and crystal growth of high-purity CdTe using the high pressure Bridgman (HPB) technique that is scalable to large volumes. The process lends itself for cost competitive industrial production of polycrystalline feedstock material for photovoltaics, sensors and electro-optic applications. Cadmium telluride (CdTe) crystals exceeding 1 kg in size were synthesized from elemental Cd and Te sources with purity comparable to state-of-the-art gamma ray detector crystals. In addition, synthesis of highly-doped CdTe feedstock for thin film photovoltaics applications demonstrating effective incorporation of group V (As, Sb) dopants was achieved at growth speeds of ~500 mm/hr. The technique may be applicable to produce other II-VI compounds with volatile components.

Original languageAmerican English
Article numberArticle No. 125466
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 15 Mar 2020

Bibliographical note

Publisher Copyright:
© 2020 Elsevier B.V.

NREL Publication Number

  • NREL/JA-5K00-75774


  • cadmium compounds
  • doping
  • growth from melt
  • semiconducting materials
  • single crystal growth
  • solar cells
  • solubility


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