Cell Shunt Resistance and Photovoltaic Module Performance

    Research output: Contribution to conferencePaper

    Abstract

    Shunt resistance of cells in photovoltaic modules can affect module power output and could indicate flawed manufacturing processes and reliability problems. We describe a two-terminal diagnostic method to directly measure the shunt resistance of individual cells in a series-connected module non-intrusively, without de-encapsulation. Peak power efficiency vs. light intensity was measured on a12-cell, series-connected, single crystalline module having relatively high cell shunt resistances. The module was remeasured with 0.5-, 1-, and 2-ohm resistors attached across each cell to simulate shunt resistances of several emerging technologies. Peak power efficiencies decreased dramatically at lower light levels. Using the PSpice circuit simulator, we verified that cell shunt and seriesresistances can indeed be responsible for the observed peak power efficiency vs. intensity behavior. We discuss the effect of basic cell diode parameters, i.e., shunt resistance, series resistance, and recombination losses, on PV module performance as a function of light intensity.
    Original languageAmerican English
    Pages1291-1294
    Number of pages4
    DOIs
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996

    Conference

    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.
    Period13/05/9617/05/96

    NREL Publication Number

    • NREL/CP-22524

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