Challenge of Replacing CdS In CuInSe2-Based Solar Cells

    Research output: Contribution to conferencePaper


    This document discusses some key issues concerning the replacement of CdS buffer layers in CIS solar cell structures, and describes investigations of alternative buffer layers deposited by MOCVD. One apparently unique property of CdS buffer layers grown by CBD is that a ZnO TCO can be deposited on top of a CdS/CIS structure without significantly degrading the photovoltaic properties of theCdS-CIS junction. Investigation of alternative buffer materials such as high resistance ZnO (i-ZnO), ZnSe and InSe have first identified MOCVD growth procedures that yield Al/X/CIS test structures (X = i-ZnO, ZnSe, and InSe) with good properties, and then addressed the challenge of fabricating efficient, complete cells with conductive ZnO top contact layers. These studies have been conductedwith Siemens CIS and CIGSS substrates, and with NREL CIGS substrates. A total area efficiency of 12.7% and estimated active area efficiency of 13.4% is reported for a CIGS cell with an i-ZnO buffer layer grown by MOCVD.
    Original languageAmerican English
    Number of pages6
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996


    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado

    Bibliographical note

    Work performed by Washington State University at Tri-Cities, Richland, Washington

    NREL Publication Number

    • NREL/CP-23738


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