Abstract
This document discusses some key issues concerning the replacement of CdS buffer layers in CIS solar cell structures, and describes investigations of alternative buffer layers deposited by MOCVD. One apparently unique property of CdS buffer layers grown by CBD is that a ZnO TCO can be deposited on top of a CdS/CIS structure without significantly degrading the photovoltaic properties of theCdS-CIS junction. Investigation of alternative buffer materials such as high resistance ZnO (i-ZnO), ZnSe and InSe have first identified MOCVD growth procedures that yield Al/X/CIS test structures (X = i-ZnO, ZnSe, and InSe) with good properties, and then addressed the challenge of fabricating efficient, complete cells with conductive ZnO top contact layers. These studies have been conductedwith Siemens CIS and CIGSS substrates, and with NREL CIGS substrates. A total area efficiency of 12.7% and estimated active area efficiency of 13.4% is reported for a CIGS cell with an i-ZnO buffer layer grown by MOCVD.
Original language | American English |
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Pages | 597-602 |
Number of pages | 6 |
State | Published - 1997 |
Event | NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996 |
Conference
Conference | NREL/SNL Photovoltaics Program Review: 14th Conference |
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City | Lakewood, Colorado |
Period | 18/11/96 → 22/11/96 |
Bibliographical note
Work performed by Washington State University at Tri-Cities, Richland, WashingtonNREL Publication Number
- NREL/CP-23738