Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

B. M. Keyes; P. Dippo; W. K. Metzger; J. AbuShama; R. Noufi

doi:10.1063/1.1613804

Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

B. M. Keyes, P. Dippo, W. K. Metzger, J. AbuShama, R. Noufi

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

27 Scopus Citations

Abstract

A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se₂ thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.

Original language	American English
Pages (from-to)	5584-5591
Number of pages	8
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1613804 https://doi.org/10.1063/1.1613804
State	Published - 2003

NREL Publication Number

NREL/JA-520-34306

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title = "Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth",

abstract = "A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se2 thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.",

author = "Keyes, {B. M.} and P. Dippo and Metzger, {W. K.} and J. AbuShama and R. Noufi",

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AU - Keyes, B. M.

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AU - Metzger, W. K.

AU - AbuShama, J.

AU - Noufi, R.

PY - 2003

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AB - A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se2 thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.

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U2 - 10.1063/1.1613804

DO - 10.1063/1.1613804

M3 - Article

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EP - 5591

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

Abstract

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