Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

B. M. Keyes; P. Dippo; W. K. Metzger; J. AbuShama; R. Noufi

doi:10.1063/1.1613804

Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

B. M. Keyes
, P. Dippo
, W. K. Metzger
, J. AbuShama
, R. Noufi

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

27 Scopus Citations

Abstract

A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se₂ thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.

Original language	American English
Pages (from-to)	5584-5591
Number of pages	8
Journal	Journal of Applied Physics
Volume	94
Issue number	9
DOIs	https://doi.org/10.1063/1.1613804 https://doi.org/10.1063/1.1613804
State	Published - 2003

NLR Publication Number

NREL/JA-520-34306

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title = "Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth",

abstract = "A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se2 thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.",

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language = "American English",

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publisher = "American Institute of Physics",

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T1 - Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

AU - Keyes, B. M.

AU - Dippo, P.

AU - Metzger, W. K.

AU - AbuShama, J.

AU - Noufi, R.

PY - 2003

Y1 - 2003

N2 - A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se2 thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.

AB - A study was conducted on the changes in the dominant recombination mechanisms of Cu(In,Ga)Se2 thin films during growth. The energy-resolved and time-resolved photoluminescence were used for the study of the changes. A change in the dominant radiative recombination process and an improvement in the underlying material quality were observed.

UR - https://www.scopus.com/pages/publications/0242552140

U2 - 10.1063/1.1613804

DO - 10.1063/1.1613804

M3 - Article

AN - SCOPUS:0242552140

SN - 0021-8979

VL - 94

SP - 5584

EP - 5591

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Changes in the Dominant Recombination Mechanisms of Polycrystalline Cu(In,Ga)Se2 Occurring During Growth

Abstract

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