Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers

Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers

Research output: Contribution to conference › Paper

Original language	American English
Pages	333-336
Number of pages	4
State	Published - 1998
Event	Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11 - Salford Duration: 8 Sep 1997 → 12 Sep 1997

Conference

Conference	Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11
City	Salford
Period	8/09/97 → 12/09/97

NREL Publication Number

NREL/CP-520-23493

Cite this

@conference{0a17831a33224897a0696750a11799f3,

title = "Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers",

author = "NREL",

year = "1998",

language = "American English",

pages = "333--336",

note = "Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11 ; Conference date: 08-09-1997 Through 12-09-1997",

}

TY - CONF

T1 - Changes to the Electrical and Structural Properties of Polycrystalline Thin-Film Cu(In,Ga)Se2 Materials by the Use of Thin MF (M=Na, K, Cs) Precursor Layers

AU - NREL, null

PY - 1998

Y1 - 1998

M3 - Paper

SP - 333

EP - 336

T2 - Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11

Y2 - 8 September 1997 through 12 September 1997

ER -