Chapter 13: Staebler-Wronski Effect: Physics and Relevance to Devices: Physics and relevance to devices

Paul Stradins, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus Citations

Abstract

Both the creation efficiency and kinetics of light-induced defects vary relatively little over a wide temperature range down to liquid He temperature. They are not governed by the competition between bimolecular and defect recombination channels. This is evidenced by sublinear time dependences of defect creation at low temperatures and at high photocarrier generation rate G where the bimolecular recombination dominates. These results indicate that defect creation is not triggered by the recombination events that dominate in the bulk. Rather, it might be triggered by recombination processes in special isolated regions such as near voids, in H-rich or H-poor regions, etc.

Original languageAmerican English
Title of host publicationPhoto-Induced Metastability in Amorphous Semiconductors
EditorsA. V. Kolobov
PublisherWiley Blackwell
Pages220-243
Number of pages24
ISBN (Electronic)9783527602544
ISBN (Print)9783527403707
DOIs
StatePublished - 2008

Bibliographical note

Publisher Copyright:
© 2003 Wiley-VCH Verlag & Co. KGaA.

NREL Publication Number

  • NREL/CH-520-36967

Fingerprint

Dive into the research topics of 'Chapter 13: Staebler-Wronski Effect: Physics and Relevance to Devices: Physics and relevance to devices'. Together they form a unique fingerprint.

Cite this