Abstract
Both the creation efficiency and kinetics of light-induced defects vary relatively little over a wide temperature range down to liquid He temperature. They are not governed by the competition between bimolecular and defect recombination channels. This is evidenced by sublinear time dependences of defect creation at low temperatures and at high photocarrier generation rate G where the bimolecular recombination dominates. These results indicate that defect creation is not triggered by the recombination events that dominate in the bulk. Rather, it might be triggered by recombination processes in special isolated regions such as near voids, in H-rich or H-poor regions, etc.
Original language | American English |
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Title of host publication | Photo-Induced Metastability in Amorphous Semiconductors |
Editors | A. V. Kolobov |
Publisher | Wiley Blackwell |
Pages | 220-243 |
Number of pages | 24 |
ISBN (Electronic) | 9783527602544 |
ISBN (Print) | 9783527403707 |
DOIs | |
State | Published - 2008 |
Bibliographical note
Publisher Copyright:© 2003 Wiley-VCH Verlag & Co. KGaA.
NREL Publication Number
- NREL/CH-520-36967