Chapter 7. External Strain: An Effective Approach to Tune Vacancy Formation and Doping

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageAmerican English
Title of host publicationDoping: Properties, Mechanisms, and Applications
EditorsL. Yu
Pages277-280
StatePublished - 2013

NREL Publication Number

  • NREL/CH-5900-54386

Keywords

  • defects
  • doping
  • semiconductor
  • strain
  • vacancy

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