Characteristics of InGaN Designed for Photovoltaic Applications

Engineering

• Photovoltaics 100%
• Solar Cell 100%
• Limitations 33%
• Band Edge 33%
• Device Structure 33%
• X-Ray Diffraction Analysis 33%
• Homojunction 33%
• High Growth Rate 33%
• Carrier Lifetime 33%
• Minority Carriers 33%
• Open Circuit Voltage 33%
• Solar Spectra 33%
• Phase Separation 33%
• Band Gap 33%
• Phase Composition 33%

Material Science

• Solar Cell 100%
• Photovoltaics 100%
• Film 66%
• Electronic Circuit 33%
• Molecular Beam Epitaxy 33%
• Indium 33%
• X Ray Diffraction Analysis 33%
• Carrier Lifetime 33%
• Phase Composition 33%