Characterization and Analysis of InGaN Photovoltaic Devices

Omkar Jani; Christiana Honsberg; Ali Asghar; David Nicol; Ian Ferguson; Alan Doolittle; Sarah Kurtz

Characterization and Analysis of InGaN Photovoltaic Devices

Omkar Jani, Christiana Honsberg, Ali Asghar, David Nicol, Ian Ferguson, Alan Doolittle, Sarah Kurtz

Materials Science

Research output: Contribution to conference › Paper › peer-review

50 Scopus Citations

Abstract

The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In _0.07Ga _0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

Original language	American English
Pages	37-42
Number of pages	6
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

NREL Publication Number

NREL/CP-520-38856

Cite this

@conference{a7a8f2af855946da9b25f7cad2976fe0,

title = "Characterization and Analysis of InGaN Photovoltaic Devices",

abstract = "The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.",

author = "Omkar Jani and Christiana Honsberg and Ali Asghar and David Nicol and Ian Ferguson and Alan Doolittle and Sarah Kurtz",

year = "2005",

language = "American English",

pages = "37--42",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - CONF

T1 - Characterization and Analysis of InGaN Photovoltaic Devices

AU - Jani, Omkar

AU - Honsberg, Christiana

AU - Asghar, Ali

AU - Nicol, David

AU - Ferguson, Ian

AU - Doolittle, Alan

AU - Kurtz, Sarah

PY - 2005

Y1 - 2005

N2 - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

AB - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

UR - http://www.scopus.com/inward/record.url?scp=27944476343&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:27944476343

SP - 37

EP - 42

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Characterization and Analysis of InGaN Photovoltaic Devices

Abstract

Conference

NREL Publication Number

Other files and links

Fingerprint

Cite this