Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Spectroscopy

Research output: Contribution to conferencePaper

Abstract

Dilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For all samples, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.25 to 0.35 eV. The minority-carrier trap density in the p-type material is quantified based on computer simulation of the devices. Thesimulations show that only about 2% of the traps in the depleted layer are filled during the transient. The fraction of the traps that are filled depends strongly on the depth of the trap, but only weakly on the doping of the layers and on the conduction-band offset. The simulations provide a pathway to obtain semi-quantitative data for analysis of minority-carrier traps by DLTS.
Original languageAmerican English
Number of pages9
StatePublished - 2006
Event2005 MRS Fall Meeting - Boston, Massachusetts
Duration: 28 Nov 20052 Dec 2005

Conference

Conference2005 MRS Fall Meeting
CityBoston, Massachusetts
Period28/11/052/12/05

NREL Publication Number

  • NREL/CP-520-38334

Keywords

  • chemical vapor deposition (CVD)
  • deep level transient spectroscopy (DLTS)
  • devices
  • metal-organic
  • minority carriers
  • PV

Fingerprint

Dive into the research topics of 'Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Spectroscopy'. Together they form a unique fingerprint.

Cite this