Abstract
This report describes two project objectives: to determine optical and gettering properties of titanium and titanium oxy-nitride films, and to examine the influence of carrier recombination processes on the microwave reflection coefficient in the frequency domain such that PV materials parameters could be evaluated nondestructively. A third topic was added as the main focus, wherein we carriedout a detailed characterization study of dislocated, high-purity, float-zone crystals grown at NREL. These crystalswere compared with nitrogen-doped CZ wafers. The accompanying report has a chapter devoted to each of these topics: (1) characterization of controlled defect/impurity growth of float-zone crystals; (2) contactless characterization of silicon wafers using frequency-resolvedphotoconductance decay; and (3) gettering and surface reflectivity of Ti thin films.
| Original language | American English |
|---|---|
| Number of pages | 33 |
| State | Published - 2002 |
Bibliographical note
Work performed by North Carolina State University, Raleigh, North CarolinaNREL Publication Number
- NREL/SR-590-31983
Keywords
- carrier recombination
- crystals
- float zone (FZ)
- microwave photoconductance
- minority carriers
- optical bandgap
- PV
- Schottky barrier
- silicon wafers
- thin films
- Ti gettering
- wavelength reflectance