Characterization of Basic Physical Properties of Sb2Se3 and its Relevance for Photovoltaics

David Bobela; Matthew Beard; Chao Chen; Shuaicheng Lu; Kai Zeng; Cong Ge; Bo Yang; Liang Gao; Yang Zhao; Jiang Tang; Ye Yang

doi:10.1007/s12200-017-0702-z

Characterization of Basic Physical Properties of Sb2Se3 and its Relevance for Photovoltaics

David Bobela, Matthew Beard, Chao Chen, Shuaicheng Lu, Kai Zeng, Cong Ge, Bo Yang, Liang Gao, Yang Zhao, Jiang Tang, Ye Yang

Huazhong University of Science & Technology

Research output: Contribution to journal › Article › peer-review

320 Scopus Citations

Abstract

Antimony selenide (Sb₂Se₃) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb₂Se₃ thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the basic physical properties of Sb₂Se₃ such as dielectric constant, anisotropic mobility, carrier lifetime, diffusion length, defect depth, defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb₂Se₃ lays a solid foundation for further optimization of solar device performance.

Original language	American English
Pages (from-to)	18-30
Number of pages	13
Journal	Frontiers of Optoelectronics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/s12200-017-0702-z https://doi.org/10.1007/s12200-017-0702-z
State	Published - 1 Mar 2017

Bibliographical note

Publisher Copyright:
© 2017, Higher Education Press and Springer-Verlag Berlin Heidelberg.

NREL Publication Number

NREL/JA-5K00-68320

Keywords

antimony selenide (SbSe)
defects
diffusion length
lifetime
mobility

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abstract = "Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant, anisotropic mobility, carrier lifetime, diffusion length, defect depth, defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance.",

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AU - Bobela, David

AU - Beard, Matthew

AU - Chen, Chao

AU - Lu, Shuaicheng

AU - Zeng, Kai

AU - Ge, Cong

AU - Yang, Bo

AU - Gao, Liang

AU - Zhao, Yang

AU - Tang, Jiang

AU - Yang, Ye

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N2 - Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant, anisotropic mobility, carrier lifetime, diffusion length, defect depth, defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance.

AB - Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant, anisotropic mobility, carrier lifetime, diffusion length, defect depth, defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance.

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Characterization of Basic Physical Properties of Sb2Se3 and its Relevance for Photovoltaics

Abstract

Bibliographical note

NREL Publication Number

Keywords

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