Characterization of Bicrystal Grain Boundary Properties Using Device Structures

This work centers on the use of small (2 mm x 2 mm) photovoltaic devices to determine the electrical characteristics of selective grain boundaries. The ESP bicrystal sheet growth method allows crystal orientation to be determined prior to growth and as such is an excellent tool for selective examination. Photolithographic techniques of a special pattern and mesa etching were used to isolate areason and around the grain boundaries for device characterization. Spreading resistance measurements over and next to the grain boundaries, as well as characterization, were used to study electrical effects of these grain boundaries.