Abstract
Cu(InGa)Se/sub 2/ thin films were deposited by elemental evaporation with x .ident. [Ga]/([In]+[Ga]) from 0.27 to 0.81 and bandgap (E/sub g/) from 1.16 to 1.54 eV. The Cu(InGa)Se/sub 2/ films were deposited with no gradients in the Ga and In and have no change in the structure or morphology as the Ga content increased. Glass/Mo/Cu(InGa)Se/sub 2//CdS/ZnO solar cells have~15% efficiency with x <.05 or E/sub g/ > 1.3 eV. V/sub oc/ increases over the entire bandgap range up to 820 mV but the cell efficiency falls off as E/sub g/ increases above 1.3 eV. Analysis of current-voltage and quantum efficiency measurements as a function of voltage show that this is attributable primarily to a voltage dependent current collection which results in a fall-off of FF, J/sub sc/ and, to a lesserextent, V/sub oc/. Finally, Cu(InGa)Se/sub 2/ films with a Ga gradient are shown to improve FF in the high bandgap cells, apparently by improving the current collection.
| Original language | American English |
|---|---|
| Pages | 763-768 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 1996 |
| Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
| Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Washington, D.C. |
| Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Delaware, Newark, DelawareNREL Publication Number
- NREL/CP-22397