Characterization of Cu(InGa)Se2 Solar Cells with High Ga Content

    Research output: Contribution to conferencePaper


    Cu(InGa)Se/sub 2/ thin films were deposited by elemental evaporation with x .ident. [Ga]/([In]+[Ga]) from 0.27 to 0.81 and bandgap (E/sub g/) from 1.16 to 1.54 eV. The Cu(InGa)Se/sub 2/ films were deposited with no gradients in the Ga and In and have no change in the structure or morphology as the Ga content increased. Glass/Mo/Cu(InGa)Se/sub 2//CdS/ZnO solar cells have~15% efficiency with x <.05 or E/sub g/ > 1.3 eV. V/sub oc/ increases over the entire bandgap range up to 820 mV but the cell efficiency falls off as E/sub g/ increases above 1.3 eV. Analysis of current-voltage and quantum efficiency measurements as a function of voltage show that this is attributable primarily to a voltage dependent current collection which results in a fall-off of FF, J/sub sc/ and, to a lesserextent, V/sub oc/. Finally, Cu(InGa)Se/sub 2/ films with a Ga gradient are shown to improve FF in the high bandgap cells, apparently by improving the current collection.
    Original languageAmerican English
    Number of pages6
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the University of Delaware, Newark, Delaware

    NREL Publication Number

    • NREL/CP-22397


    Dive into the research topics of 'Characterization of Cu(InGa)Se2 Solar Cells with High Ga Content'. Together they form a unique fingerprint.

    Cite this