Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies

F. A. Abou-Elfotouh; L. L. Kazmerski; T. J. Coutts; D. J. Dunlavy; M. Almassari; S. Chaudhuri; R. W. Birkmire

Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies

F. A. Abou-Elfotouh, L. L. Kazmerski, T. J. Coutts, D. J. Dunlavy, M. Almassari, S. Chaudhuri, R. W. Birkmire

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

The behavior of the (CdZn)S/CuInSe₂ solar cell is numerically analyzed, and the attainable performances for this device type are predicted by imposing the known material parameters. Single crystals of p-type CuInSe₂ were characterized and used to fabricate heterojunction solar cells of the form n-(Cd,Zn)S/p-CuInSe₂. The experimental and computed performance data are compared. Photoluminescence measurements were performed to determine the dominant electrically active defect states in p-type crystals that simultaneously have high carrier concentrations (≥ 5 × 10¹⁶ cm^-3) and high-carrier mobilities (≥ 50 cm²/V-s). It was found that this material is dominated by two strong emission lines at 0.940 and 0.920 eV which are attributed to the defect pairs In_Cu-V_Cu and Se_Cu-Cu_In, respectively. The corresponding composition is defined by a Cu/In ratio of 0.9, a Cu content around 23 at.%, and a Se excess (≥51 at.%). An energy band diagram of this material is also proposed.

Original language	American English
Pages	1520-1524
Number of pages	5
State	Published - 1988
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 26 Sep 1988 → 30 Sep 1988

Conference

Conference	Twentieth IEEE Photovoltaic Specialists Conference - 1988
City	Las Vegas, NV, USA
Period	26/09/88 → 30/09/88

NREL Publication Number

ACNR/CP-213-11143

Cite this

@conference{68a34532521d491eb27ac4dec81e420b,

title = "Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies",

abstract = "The behavior of the (CdZn)S/CuInSe2 solar cell is numerically analyzed, and the attainable performances for this device type are predicted by imposing the known material parameters. Single crystals of p-type CuInSe2 were characterized and used to fabricate heterojunction solar cells of the form n-(Cd,Zn)S/p-CuInSe2. The experimental and computed performance data are compared. Photoluminescence measurements were performed to determine the dominant electrically active defect states in p-type crystals that simultaneously have high carrier concentrations (≥ 5 × 1016 cm-3) and high-carrier mobilities (≥ 50 cm2/V-s). It was found that this material is dominated by two strong emission lines at 0.940 and 0.920 eV which are attributed to the defect pairs InCu-VCu and SeCu-CuIn, respectively. The corresponding composition is defined by a Cu/In ratio of 0.9, a Cu content around 23 at.%, and a Se excess (≥51 at.%). An energy band diagram of this material is also proposed.",

author = "Abou-Elfotouh, {F. A.} and Kazmerski, {L. L.} and Coutts, {T. J.} and Dunlavy, {D. J.} and M. Almassari and S. Chaudhuri and Birkmire, {R. W.}",

year = "1988",

language = "American English",

pages = "1520--1524",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

}

TY - CONF

T1 - Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies

AU - Abou-Elfotouh, F. A.

AU - Kazmerski, L. L.

AU - Coutts, T. J.

AU - Dunlavy, D. J.

AU - Almassari, M.

AU - Chaudhuri, S.

AU - Birkmire, R. W.

PY - 1988

Y1 - 1988

N2 - The behavior of the (CdZn)S/CuInSe2 solar cell is numerically analyzed, and the attainable performances for this device type are predicted by imposing the known material parameters. Single crystals of p-type CuInSe2 were characterized and used to fabricate heterojunction solar cells of the form n-(Cd,Zn)S/p-CuInSe2. The experimental and computed performance data are compared. Photoluminescence measurements were performed to determine the dominant electrically active defect states in p-type crystals that simultaneously have high carrier concentrations (≥ 5 × 1016 cm-3) and high-carrier mobilities (≥ 50 cm2/V-s). It was found that this material is dominated by two strong emission lines at 0.940 and 0.920 eV which are attributed to the defect pairs InCu-VCu and SeCu-CuIn, respectively. The corresponding composition is defined by a Cu/In ratio of 0.9, a Cu content around 23 at.%, and a Se excess (≥51 at.%). An energy band diagram of this material is also proposed.

AB - The behavior of the (CdZn)S/CuInSe2 solar cell is numerically analyzed, and the attainable performances for this device type are predicted by imposing the known material parameters. Single crystals of p-type CuInSe2 were characterized and used to fabricate heterojunction solar cells of the form n-(Cd,Zn)S/p-CuInSe2. The experimental and computed performance data are compared. Photoluminescence measurements were performed to determine the dominant electrically active defect states in p-type crystals that simultaneously have high carrier concentrations (≥ 5 × 1016 cm-3) and high-carrier mobilities (≥ 50 cm2/V-s). It was found that this material is dominated by two strong emission lines at 0.940 and 0.920 eV which are attributed to the defect pairs InCu-VCu and SeCu-CuIn, respectively. The corresponding composition is defined by a Cu/In ratio of 0.9, a Cu content around 23 at.%, and a Se excess (≥51 at.%). An energy band diagram of this material is also proposed.

UR - http://www.scopus.com/inward/record.url?scp=0024187333&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024187333

SP - 1520

EP - 1524

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies

Abstract

Conference

NREL Publication Number

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