Characterization of CuInSe2 Single Crystals for Solar Cell Modeling Studies

F. A. Abou-Elfotouh, L. L. Kazmerski, T. J. Coutts, D. J. Dunlavy, M. Almassari, S. Chaudhuri, R. W. Birkmire

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


The behavior of the (CdZn)S/CuInSe2 solar cell is numerically analyzed, and the attainable performances for this device type are predicted by imposing the known material parameters. Single crystals of p-type CuInSe2 were characterized and used to fabricate heterojunction solar cells of the form n-(Cd,Zn)S/p-CuInSe2. The experimental and computed performance data are compared. Photoluminescence measurements were performed to determine the dominant electrically active defect states in p-type crystals that simultaneously have high carrier concentrations (≥ 5 × 1016 cm-3) and high-carrier mobilities (≥ 50 cm2/V-s). It was found that this material is dominated by two strong emission lines at 0.940 and 0.920 eV which are attributed to the defect pairs InCu-VCu and SeCu-CuIn, respectively. The corresponding composition is defined by a Cu/In ratio of 0.9, a Cu content around 23 at.%, and a Se excess (≥51 at.%). An energy band diagram of this material is also proposed.

Original languageAmerican English
Number of pages5
StatePublished - 1988
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 26 Sep 198830 Sep 1988


ConferenceTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA

NREL Publication Number

  • ACNR/CP-213-11143


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