Characterization of Defects in Hydrogenated Amorphous Silicon Devices Using Charge Collection Scanning Electron Microscopy

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	843-854
Number of pages	12
Journal	Journal of Electronic Materials
Volume	13
Issue number	6
DOIs	https://doi.org/10.1007/BF02655303
State	Published - 1984

NREL Publication Number

@article{5fba10566a8b4e608234c41d8ed08dcc,

title = "Characterization of Defects in Hydrogenated Amorphous Silicon Devices Using Charge Collection Scanning Electron Microscopy",

author = "NREL",

year = "1984",

doi = "10.1007/BF02655303",

language = "American English",

volume = "13",

pages = "843--854",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "6",

}